May 23 2013
STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, has introduced its latest generation of energy-efficient power devices that reduce the environmental impact of equipment such as telecom or computing systems, solar inverters, industrial automation and automotive applications.
STripFET VII DeepGATE MOSFETs
ST’s new STripFET™ VII DeepGATE™ MOSFETs deliver the best conducting efficiency among currently available 80V and 100V devices, while switching efficiency is also increased. In addition, the devices help to simplify designs and reduce equipment size and cost by allowing system power and efficiency targets to be met using fewer devices in small package sizes.
The critical advance in ST’s STripFET VII DeepGATE technology is an enhanced MOSFET gate structure, which lowers device on-state resistance while also reducing internal capacitances and gate charge for faster, more efficient switching. The devices also have high avalanche ruggedness to survive potentially damaging hard conditions, which makes them a strong choice for automotive applications.
More than 15 STripFET VII DeepGATE devices are available immediately for sample or production orders, including the STP270N8F7 80V device and several 100V parts in a choice of TO-220, DPAK, PowerFLAT™ 5x6, and 2-lead or 6-lead H2PAK packages. Prices for 1000-piece orders range from $1.70 for the 100V STD100N10F7 and STL100N10F7 to $3.80 for the STH310N10F7-2 device. If your company has a high-volume need, please contact your ST sales office.